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AOD472A TM N-Channel SDMOS POWER Transistor
General Description
The AOD472A/L is fabricated with SDMOS trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. AOD472A and AOD472AL are electrically identical. -RoHS Compliant -AOD472AL is Halogen Free
TM
Features
VDS (V) = 25V ID = 55A RDS(ON) < 5.5m RDS(ON) < 9.5m (VGS = 10V) (VGS = 10V) (VGS = 4.5V)
100% UIS Tested! 100% R g Tested!
Top View D
TO-252 D-PAK
Bottom View
D
G S G S G S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain CurrentG Pulsed Drain Current C Pulsed Forward Diode CurrentC Avalanche Current C Repetitive avalanche energy L=50uH TC=25C Power Dissipation Power Dissipation
B C
Maximum 25 20 55 43 100 100 50 63 50 25 2.5 1.6 -55 to 175
Units V V
TC=25C TC=100C ID IDM ISM IAR EAR PD PDSM TJ, TSTG
A
mJ W W C
TC=100C TA=25C TA=70C
A
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Case B Maximum Junction-to-TAB
B
Symbol t 10s Steady-State Steady-State Steady-State RJA RJC RJC-TAB
Typ 15 41 2.1 2.4
Max 20 50 3 3.4
Units C/W C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
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AOD472A
Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=30A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current G 1500 VGS=0V, VDS=12.5V, f=1MHz VGS=0V, VDS=0V, f=1MHz 340 200 1.1 25 VGS=10V, VDS=12.5V, ID=30A 12 3.5 6.5 VGS=10V, VDS=12.5V, RL=0.42, RGEN=3 IF=30A, dI/dt=500A/s
2
Conditions ID=250A, VGS=0V VDS=25V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125C
Min 25
Typ
Max
Units V
10 50 100 1.2 100 4.4 6.6 7.8 65 0.7 1 50 1800 445 285 1.6 31 15 4.8 8.9 8 10.4 29 9 9.5 17 12 21 15 26 2200 580 400 2.4 40 20 7 13 5.5 8.2 9.5 2 2.5
A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/s
A: The value of RJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on RJA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev1 : Nov. 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD472A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 10V 80 7V 60 ID (A) ID(A) 4V 40 20 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 12 Normalized On-Resistance 10 RDS(ON) (m) 8 6 4 VGS=10V 2 0 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 5 10 VGS=4.5V 2 1.8 1.6 VGS=10V, 30A 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) 18 Figure 4: On-Resistance vs. Junction Temperature 20 VGS=3.5V 0 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics 125C 25C 40 5V 4.5V 60 80 VDS=5V
17 5 2 VGS=4.5V, 20A10
0
200
20 ID=30A 15 RDS(ON) (m) IS (A)
1.0E+02 1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 125C 25C
40
10
125C
5 25C 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
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AOD472A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=12.5V ID=30A Capacitance (pF) 2800 2400 2000 1600 1200 800 400 0 0 5 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics 10 35 0 Crss 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 5 25 Coss Ciss
8
VGS (Volts)
6
4
2
0
1000.0 100.0 ID (Amps) 10.0 1.0 0.1 0.0 0.01 10s
200
10s
Power (W)
160 120 80 40 0 0.0001
TJ(Max)=175C TC=25C
RDS(ON) limited DC
100s 1m 10ms
17 5 2 10
TJ(Max)=175C TC=25C
0.1 1 VDS (Volts) 10 100
0.001
0.01
0.1
1
Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W 1
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0
10
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
PD Ton
0.01 0.00001
Single Pulse 0.0001 0.001 0.01 0.1 1
T 10 100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOD472A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 ID(A), Peak Avalanche Current 70 60 50 40 30 20 10 0 0.000001 0.00001 0.0001 0.001 TA=125C TA=150C TA=100C TA=25C Power Dissipation (W) 60 50 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note F)
Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability
60 50 Current rating ID(A) Power (W) 40 30 20 10 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note F)
10000 TA=25C 1000 17 100 5 2 10 10
1 1E05
1E- 0.001 0.01 0.1 1 10 100 1000 0 04 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
100 ZJA Normalized Transient Thermal Resistance 10 1 0.1 PD 0.01 0.001 0.00001 Single Pulse Ton T 0.0001 0.001 0.01 0.1 1 10 100 1000 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOD472A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 di/dt=700A/us 25 20 Qrr (nC) Qrr 15 125C 10 Irm 5 0 0 5 10 15 20 25 30 IB (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 30 25 20 Qrr (nC) 15 10 5 0 0 Irm 100 200 300 400 500 600 700 25C 2 0 800 5 25C Qrr Is=20A 125C 8 25C 6 4 15 Irm (A) trr (ns) trr 125 25C S 1 0.5 0 800 10 20 Is=20A 125C 2 1.5 S 600 700 25C 2 0 4 25C 6 125C 12 10 8 Irm (A) trr (ns) 16 14 12 10 8 6 4 2 0 0 5 10 15 20 25 30 IB (A) Figure 18: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current 2.5 S 25C 2 trr di/dt=700A/us 125C 3 2.5
125C 1 0.5 0
10
125C
0 0 100 200 300 400 500
di/dt (A/s) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt
di/dt (A/s) Figure 20: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
S
25C
1.5
AOD472A
Gate Charge Test Circuit & W aveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg
DUT
VDC
+ Vdd Vgs
t d(on) t on tr t d(off) t off tf
90%
10%
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds E AR= 1/2 LIAR
2
BVDSS
VDC
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds Isd Vgs Ig
L
Isd
IF
dI/dt I RM Vdd
VDC
+ Vdd Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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